High Voltage Resistance Blocking Diode DKA40BA300
For safety reason, in a solar power system, the backflow prevention diode module needs a reverse breakdown voltage twice the value of the string voltage. We have developed a low loss backflow prevention diode module with an ultra-high breakdown voltage of 3000V for DC 1500V strings.
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- According to IEC60364-7-712 standard, maximum voltage must be twice the open circuit string voltage. (U OC STC)
Features
- Voltage Reverse DC 3000V isolated package (per chip)
- Our unique technology achieves "low loss" and "high heat dissipation" despite high breakdown voltage.
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High voltage strings benefits
Higher string voltage reduces loss in the entire power generation system and improves its efficiency.
Fewer parallel strings means reduced number of junction boxes and lower installation costs.
Applications
- Junction box for Solar (PV) power generation
- Reverse current prevention for DC line
such as electric storage equipment
Maximum Ratings
Tj = 25℃ unless otherwise specified
Item | Symbol | Unit | Ratings | |
---|---|---|---|---|
DC Reverse Voltage | VR(DC) | V | 3000 |
Item | Symbol | Unit | Ratings | Conditions | |
---|---|---|---|---|---|
Average Forward Current | IF(AV) | A | 20 | DC Tc=125℃ | |
Surge Forward Current | IFSM | A | 830/910 | 50/60Hz, Sin.Wave, Peak Value, Non-repetitive | |
I2t (for fusing) | I2t | A2s | 3440 | Value for one cycle of surge current | |
Isolation Voltage | VISO | V | 4500 | Terminals to case, AC RMS 1 minute | |
Operating Junction Temperature | Tj | ℃ | -40 to +150 | - | |
Storage Temperature | Tstg | ℃ | -40 to +125 | - | |
Mounting Torque | Mounting (M6) | - | N・m (kgf・cm) |
4.7(48) | Recommended value 2.5 to 3.9(25 to 40) |
Terminal (M5) | 2.7(28) | Recommended value 1.5 to 2.5(15 to 25) | |||
Mass | - | g | 150 | Typical value |
Electrical Characteristics
Tj = 25℃ unless otherwise specified
Item | Symbol | Unit | Ratings | Conditions | ||
---|---|---|---|---|---|---|
Min. | Typ. | Max. | ||||
Reverse Current | IR | mA | - | - | 10 | VR = 3000V, Tj=150℃ |
Forward Voltage | VF | V | - | 0.94 | 1.15 | IF = 20A Inst. measurement |
Thermal Resistance | Rth(j-c) | ℃/W | - | - | 0.64 | Junction to Case (per Chip) |
Interface Thermal Resistance |
Rth(c-f) | ℃/W | - | 0.09 | - | Case to Heat Sink Thermal conductivity (Silicone grease) ≒ 9×10-3[W/cm・℃] |