Fast Recovery Diode DBA200ZA20
Excellent high-speed recovery characteristics (trr :Typ 50ns) are realized by optimization technology cultivated over many years.
In addition, the sufficient avalanche withstand capacity makes them ideal for replacing Schottky barrier diodes.
What is avalanche tolerance?
When a reverse voltage exceeding the rating is applied to a semiconductor device, current flows due to avalanche breakdown.
The amount of energy (current) that can be withstood at this time is expressed as the avalanche withstand capacity.
Devices with improved avalanche resistance are features less likely to be destroyed by avalanche currents than general.
Features
- Excellent high-speed recovery characteristics achieved by optimization technology cultivated over many years (trr :Typ 50ns)
- Suitable for replacing Schottky barrier diodes due to sufficient avalanche resistance
- Uses the compact, highly reliable SOT-227 standard package
- Can be directly attached to the heat sink
- Withstand voltage up to 2500V
Applications
- Welder secondary side fast rectification
- Switching Mode Power Supply
- Induction Heating Power Supply
Welding Equipment Configuration
Contributes to miniaturization of mounted devices by combining with other devices of ours in SOT-227 package
Maximum Ratings
unless otherwise specified Tj=25℃
| Item | Symbol | Unit | Rating | Conditions | ||
|---|---|---|---|---|---|---|
| Reverse DC voltage | VR(DC) | V | 200 | |||
| Average Forward Current | IF(AV) | A | 100 | DC, Tc=98℃ (per element) | ||
| Withstand voltage | VISO | V | 2500 | AC RMS value 1 min | ||
| Avalanche current (single shot) | IAS | A | 40 | V=100V、 L=1.15mH | ||
| Shear head avalanche power (repetitive) | PARM | W | 45000 | Tp = 10 μs | ||
| Operating Junction Temperature | Tj | ℃ | - 40 ～ +150 | |||
Electrical Characteristics
unless otherwise specified Tj=25℃
| Item | Symbol | unit condition | Rating | Conditions | ||
|---|---|---|---|---|---|---|
| smallest | standard | largest | ||||
| Reverse current | IR | mA | 0.5 | 5 | Tj=Tjmax、 VR=VR(DC)、（per element） | |
| Forward Voltage | VF | V | 1 | 1.15 | IF=100A、（per element） | |
| Threshold Voltage | V(to) | V | 0.84 | 0.96 | Tj = 25℃ | |
| 0.62 | 0.7 | Tj=Tjmax | ||||
| reverse recovery time | trr | ns | 50 | 65 | IF=100A、 VR=100V、 -di/dt=200A /μs、（per element） | |
| Thermal Resistance | Rth(j-c) | ℃/W | 0.25 | Junction - inter-chase（Per module） | ||
