DIP type 3-Phase Diode Bridge DF60NB160 / DF75NB160 / DF100NB160
We have expanded the lineup of DIP type three-phase rectifier diode bridges to 60A, 75A, and 100A, by using a transfer mold package that is compact and has excellent long-term reliability.
It contributes to downsizing the customers' products, and there are several capacities to choose from.
- High reliability
- High heat dissipation
- Downsized
- Dual terminal
Features
- Long term reliability (power cycle capability) is 3 times better thanks to transfer molding package
- Reduced thermal resistance with unique internal structure and copper heat plate
- Dual terminals that achieve both high current capacity and good solderability
- Volume ratio of 1/10
Comparison with our conventional product DF60LA/LB - Possibility to save space by reducing the number of parts. Also possible to reduce the number of assembly steps
- Easy product identification by double side marking even on the mounted side
- We use a high breakdown voltage 1600V diode bridge with a mesa structure suitable for AC400V
Applications
- Packaged Air Conditioner
- Motor Drives
- Servo Controller
- Battery Charger
- Power Supply
Maximum Ratings
Tj = 25℃ unless otherwise specified
Item | Symbol | Unit | Ratings |
---|---|---|---|
Repetitive Peak Reverse Voltage | VRRM | V | 1600 |
Non-Repetitive Peak Reverse Voltage | VRSM | V | 1700 |
Item | Symbol | Unit | Ratings | Conditions | |||
---|---|---|---|---|---|---|---|
DF60NB | DF75NB | DF100NB | |||||
Output Current(DC) | ID | A | 60 | 75 | 100 | 3-phase full wave, DF60NB160:Tc=110℃ DF75NB160:Tc=112℃ DF100NB160:Tc=98℃ |
|
Surge Forward Current | IFSM | A | 730/800 | 910/1000 | 910/1000 | 50/60Hz sine wave, Non-repetitive ½cycle peak value | |
I2t(for fusing) | I2t | A2s | 2600 | 4100 | 4100 | Value for one cycle of surge current | |
Operating Junction Temperature | Tj | ℃ | -40 to +150 | - | |||
Storage Temperature | Tstg | ℃ | -40 to +125 | - | |||
Isolation Voltage | VISO | V | 2500 | Terminals to case, AC RMS 1minute | |||
Mounting Torque | M4 | - | N・m | 1.5 | Recommended Torque:1.0 to 1.4 | ||
Mass | - | g | 24 | Typical Value |
Electrical Characteristics
Tj=25℃ unless otherwise specified
Item | Symbol | Unit | Ratings | Conditions | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|
Min. | Typ. | Max. | ||||||||||
DF60NB/DF75NB/DF100NB | DF60NB | DF75NB | DF100NB | DF60NB | DF75NB | DF100NB | DF60NB | DF75NB | DF100NB | |||
Repetitive Peak Reverse Current | IRRM | mA | - | - | - | - | 8.00 | 8.00 | 8.00 | Tj=150℃, VR=1600V, VR = VRRM | ||
Forward Voltage Drop | VFM | V | - | 1.08 | 1.09 | 1.16 | 1.30 | 1.30 | 1.35 | Tj=25℃ Inst. measurement IF=60A |
Tj=25℃ Inst. measurement IF=75A |
Tj=25℃ Inst. measurement IF=100A |
Threshold Voitage | V(TO) | V | - | - | - | - | 0.91 | 0.80 | 0.90 | Tj=150℃ | ||
Slope Resistance | rt | mΩ | - | - | - | - | 4.90 | 5.00 | 4.50 | Tj=150℃ | ||
Thermal Resistance | Rth(j-c) | ℃/W | - | - | - | - | 0.25 | 0.20 | 0.20 | Junction to case (per Module) | ||
Interface Thermal Resistance | Rth(c-f) | ℃/W | - | - | - | - | 0.20 | 0.14 | 0.14 | Case to Heat sink Thermal conductivity(Silicon grease)≒ 9×10-3[W/cm・℃] |