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DIP type 3-Phase Diode Bridge DF60NB160 / DF75NB160 / DF100NB160

DIP type 3-Phase Diode Bridge

We have expanded the lineup of DIP type three-phase rectifier diode bridges to 60A, 75A, and 100A, by using a transfer mold package that is compact and has excellent long-term reliability.
It contributes to downsizing the customers' products, and there are several capacities to choose from.

High reliability
High heat dissipation
Downsized
Dual terminal

Features

  • Long term reliability (power cycle capability) is 3 times better thanks to transfer molding package
  • Reduced thermal resistance with unique internal structure and copper heat plate
  • Dual terminals that achieve both high current capacity and good solderability
  • Volume ratio of 1/10
    Comparison with our conventional product DF60LA/LB
  • Possibility to save space by reducing the number of parts. Also possible to reduce the number of assembly steps
  • Easy product identification by double side marking even on the mounted side
  • We use a high breakdown voltage 1600V diode bridge with a mesa structure suitable for AC400V

Applications

  • Packaged Air Conditioner
  • Motor Drives
  • Servo Controller
  • Battery Charger
  • Power Supply

Maximum Ratings

Tj = 25℃ unless otherwise specified

Item Symbol Unit Ratings
Repetitive Peak Reverse Voltage VRRM V 1600
Non-Repetitive Peak Reverse Voltage VRSM V 1700
Item Symbol Unit Ratings Conditions
DF60NB DF75NB DF100NB
Output Current(DC) ID A 60 75 100 3-phase full wave,
DF60NB160:Tc=110℃
DF75NB160:Tc=112℃
DF100NB160:Tc=98℃
Surge Forward Current IFSM A 730/800 910/1000 910/1000 50/60Hz sine wave, Non-repetitive ½cycle peak value
I2t(for fusing) I2t A2s 2600 4100 4100 Value for one cycle of surge current
Operating Junction Temperature Tj -40 to +150 -
Storage Temperature Tstg -40 to +125 -
Isolation Voltage VISO V 2500 Terminals to case, AC RMS 1minute
Mounting Torque M4 - N・m 1.5 Recommended Torque:1.0 to 1.4
Mass - g 24 Typical Value

Electrical Characteristics

Tj=25℃ unless otherwise specified

Item Symbol Unit Ratings Conditions
Min. Typ. Max.
DF60NB/DF75NB/DF100NB DF60NB DF75NB DF100NB DF60NB DF75NB DF100NB DF60NB DF75NB DF100NB
Repetitive Peak Reverse Current IRRM mA - - - - 8.00 8.00 8.00 Tj=150℃, VR=1600V, VR = VRRM
Forward Voltage Drop VFM V - 1.08 1.09 1.16 1.30 1.30 1.35 Tj=25℃
Inst. measurement
IF=60A
Tj=25℃
Inst. measurement
IF=75A
Tj=25℃
Inst. measurement
IF=100A
Threshold Voitage V(TO) V - - - - 0.91 0.80 0.90 Tj=150℃
Slope Resistance rt - - - - 4.90 5.00 4.50 Tj=150℃
Thermal Resistance Rth(j-c) ℃/W - - - - 0.25 0.20 0.20 Junction to case (per Module)
Interface Thermal Resistance Rth(c-f) ℃/W - - - - 0.20 0.14 0.14 Case to Heat sink
Thermal conductivity(Silicon grease)≒ 9×10-3[W/cm・℃]

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