Our original package "Techno Block"
1700V 2 in 1 SiC MOSFET Module
FCA300AD170(300A 1700V)
Expanding the lineup further with 1200V!
Now available with a 300A rating, offering a higher current capacity than previous products, making it ideal for high-power applications.
Features
- Achieving a high withstand voltage of 1700V enables more efficient circuit applications.
- By using our unique Techno Block packaging technology*1, we have achieved miniaturization and a long-term reliability design*2.
- Equipped with a DioMOS (Diode integrated MOSFET) chip with an integrated diode function, enabling high-speed operation.
- Maintains a long short-circuit withstand time even during high-temperature operation, making protective function design easier.
- Retains low on-resistance characteristics at high temperatures, advantageous for high-power applications (enables nearly double the current control compared to other products with the same current rating).
- Equipped with a chip that resists malfunction (Vgsth = 4.0V (Typ.)), with low sensitivity to noise signals on the gate, making design easier.
- *1
- Our unique packaging technology that combines solder bonding technology with a transfer molding process.
- *2
- Power cycle tolerance is approximately three times that of our previous products (improved long-term reliability over conventional package products by adopting Techno Block technology, which does not use wire bonding technology).
Applications
- Industrial Inverters,
- Switching Power Supply
- High Frequency Power Supply etc.
Maximum Ratings
Tj=25℃ unless otherwise specified
Item | Symbol | Unit | Ratings | Conditions | |
---|---|---|---|---|---|
Drain-Source Voltage | VDSS | V | 1700 | - | |
Continuous Drain Current | ID | A | 300 | VGS=20V、Tc=100℃ | |
ID(pulse) | A | 600 | Pulse | ||
Total Power Dissipation | Ptot | W | 1750 | Tc=25℃ | |
Operating Junction Temperature | Tj | ℃ | -40 to +150 | - | |
Isolation Voltage | Viso | V | 4000 | AC 60Hz 1min |
Electrical Characteristics
Tj=25℃ unless otherwise specified
Item | Symbol | Unit | Ratings | Conditions | ||||
---|---|---|---|---|---|---|---|---|
Min. | Typ. | Max. | ||||||
On-State Resistance | RDS(on) | mΩ | - | 2.7 | 5.8 | VGS=20V, ID=300A | ||
- | 3.9 | 7.5 | VGS=20V, ID=300A, Tj=150℃ | |||||
Drain Cutoff Current | IDSS | μA | - | - | 600 | VDS=1700V, VGS=0V | ||
Gate-Source Threshold Voltage | VGS(th) | V | 3 | 4 | 5.2 | VDS=10V, ID=9.0mA | ||
Gate-Source Leakage Current | IGSS | nA | - | - | 600 | VGS=20V, VDS=0V | ||
Thermal Resistance | Rth(j-c) | ℃/W | - | - | 0.07 | Junction to Case (per Leg) |