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Our original package "Techno Block"
1700V 2 in 1 SiC MOSFET Module
FCA300AD170(300A 1700V)

Our original package Techno Block 1700V 2 in 1 SiC MOSFET Module

Expanding the lineup further with 1200V!
Now available with a 300A rating, offering a higher current capacity than previous products, making it ideal for high-power applications.

Features

  • Achieving a high withstand voltage of 1700V enables more efficient circuit applications.
  • By using our unique Techno Block packaging technology*1, we have achieved miniaturization and a long-term reliability design*2.
  • Equipped with a DioMOS (Diode integrated MOSFET) chip with an integrated diode function, enabling high-speed operation.
  • Maintains a long short-circuit withstand time even during high-temperature operation, making protective function design easier.
  • Retains low on-resistance characteristics at high temperatures, advantageous for high-power applications (enables nearly double the current control compared to other products with the same current rating).
  • Equipped with a chip that resists malfunction (Vgsth = 4.0V (Typ.)), with low sensitivity to noise signals on the gate, making design easier.
*1
Our unique packaging technology that combines solder bonding technology with a transfer molding process.
*2
Power cycle tolerance is approximately three times that of our previous products (improved long-term reliability over conventional package products by adopting Techno Block technology, which does not use wire bonding technology).

Low on-state resistance even at high temp.

Built in FWD

Applications

  • Industrial Inverters,
  • Switching Power Supply
  • High Frequency Power Supply
  • etc.

Maximum Ratings

Tj=25℃ unless otherwise specified

Item Symbol Unit Ratings Conditions
Drain-Source Voltage VDSS V 1700 -
Continuous Drain Current ID A 300 VGS=20V、Tc=100℃
ID(pulse) A 600 Pulse
Total Power Dissipation Ptot W 1750 Tc=25℃
Operating Junction Temperature Tj -40 to +150 -
Isolation Voltage Viso V 4000 AC 60Hz 1min

Electrical Characteristics

Tj=25℃ unless otherwise specified

Item Symbol Unit Ratings Conditions
Min. Typ. Max.
On-State Resistance RDS(on) - 2.7 5.8 VGS=20V, ID=300A
- 3.9 7.5 VGS=20V, ID=300A, Tj=150℃
Drain Cutoff Current IDSS μA - - 600 VDS=1700V, VGS=0V
Gate-Source Threshold Voltage VGS(th) V 3 4 5.2 VDS=10V, ID=9.0mA
Gate-Source Leakage Current IGSS nA - - 600 VGS=20V, VDS=0V
Thermal Resistance Rth(j-c) ℃/W - - 0.07 Junction to Case (per Leg)

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