Achieving next-generation energy efficiency
1700V-rated SiC MOSFET discrete
FMG50AQ170N6
By adopting SiC MOSFET chips with built-in body diode functionality and a 4-pin structure, we achieve high-speed, low-loss operation with minimal noise.
Features
- Adopts an optimal package that ensures insulation structure and high heat dissipation
- Compact and highly reliable
- No additional FWD(Flywheel Diode) required
- High short-circuit withstand time capability
- Low on-resistance even at high temperatures
- High noise immunity
Applications
- Industrial Inverters
- Switching Power Supplies
- High Frequency Power Supplies etc.
Maximum Ratings
Tj=25℃ unless otherwise specified
| Item | Symbol | Unit | Ratings | Conditions |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | V | 1700 | - |
| Continuous Drain Current | ID | A | 50 | VGS=20V, Tc=101℃, DC |
| Total Power Dissipation | Ptot | W | 440 | Tc=25℃ |
| Operating Junction Temperature | Tj | ℃ | -40 to +150 | - |
| Isolation Voltage | Viso | V | 2500 | AC 60Hz 1min |
Electrical Characteristics
Tj=25℃ unless otherwise specified
| Item | Symbol | Unit | Ratings | Conditions | ||
|---|---|---|---|---|---|---|
| Min. | Typ. | Max. | ||||
| On-State Resistance | RDS(on) | mΩ | - | 16.3 | 31.0 | VGS=20V,ID=50A |
| - | 22.1 | 41.0 | VGS=20V,ID=50A,Tj=150℃ | |||
| Drain Cutoff Current | IDSS | μA | - | - | 100 | VDS=1700V, VGS=0V |
| Gate-Source Threshold Voltage | VGS(th) | V | 3.0 | 4.0 | 5.2 | VDS=10V,ID=1.5mA |
| Gate-Source Leakage Current | IGSS | nA | - | - | 100 | VGS=20V, VDS=0V |
| Thermal Resistance | Rth(j-c) | ℃/W | - | 0.21 | 0.28 | - |
