News
2019.4.23
Started mass production of 1200V withstand voltage SiC MOSFET module that realized high reliability and low loss
We are pleased to announce the start of mass production of SiC MOSFET modules with 2 elements with 1200V withstand voltage (current capacity 150A) from April.
[Aim of release]
Power devices such as power transistors are used in a variety of applications in the automotive and industrial fields.
SiC (Silicon Carbide) power devices are attracting attention as key devices for energy saving in high current and high voltage applications because they are capable of low loss and high speed operation compared to conventional Si (Silicon). Our SiC MOSFET module uses our unique Techno Block packaging technology * 1 to improve long-term reliability, reduce loss, and reduce size.
This product has been commercialized through joint development with Panasonic Corporation.
[Product overview]
Product name | Model | Constitution | Withstand voltage | Current capacity | RDS(on) | Size |
SiC MOSFET Module |
FCA150AC120 | SiC MOSFET 2in1 |
1200V | 150A | 6.0mΩ(Typ.) VGS=20V,ID=150A |
14.0×99.0×32.0㎜ |
[New product features]
1. Our original Techno Block package technology that realizes improvement of long-term reliability * 2 and miniaturization
2. Internal structure that enables high-speed switching and reduces inductance by about 1/2 (compared to our conventional products)
3. Unnecessary inductance can be reduced to achieve ideal switching
Panasonic Corporation’s original SiC MOSFET chip with a built-in regenerative diode function
Equipped with (DioMOS (Diode integrated MOSFET))
4. Realize safety design of machinery against short-circuit failure, which is said to be a weak point of SiC-MOS.
Industry-leading short-circuit withstand capacity
5. On-resistance characteristics that realize high-efficiency power during actual use and have little change even when the chip is hot (150 ° C)
6. Gate characteristics with a high threshold value that is resistant to malfunction against noise during high-frequency drive (threshold voltage 4.0V (Typ.))
* 1 A packaging technology that combines a transfer molding method with a structure in which a metal and a chip are sandwiched by solder joining.
Achieves long-term reliability and miniaturization by not using wire bonding technology to connect
* 2 Power cycle capacity Approximately 3 times that of our conventional package (compared to the conventional package and the package that uses Techno Block technology)
[Main applications]
・ Industrial inverter
・ DC-DC converter
・ EV charger
・ High-power resonant Power Supply
[Environmental consideration]
This product complies with the RoHS * directive (2011/65 / EU and (EU) 2015/863).
※ Restriction of the use of certain Hazardous Substances in electrical
and electronic equipment.
[Future prospects]
By expanding the lineup of transfer mold construction method packages and SiC-equipped products, which we are good at, we will contribute to high reliability and high-efficiency power of various Power Supply devices, as well as miniaturization and cost reduction.
* The information contained in this press release is as of the time of the announcement.
The contents are subject to change without notice. Please note.